Write Endurance to Write Home About

Radiation tolerance, power efficiency, and fast write performance also characterize F-RAM non-volatile storage technology.

Ferroelectric Random Access Memory (F-RAM) is a non-volatile storage technology that offers low power, fast write performance, and a greater write endurance when compared to EEPROM or flash technologies. For example, the write endurance of F-RAM from Cypress Semiconductor is 10^14 (100 trillion) write cycles. Presuming the device takes 4 ms to rewrite every cell, it would take a minimum of 126 years for a failure to occur. However, EEPROM and NOR Flash have write endurance of just 10^6 (1 million) write cycles. Additionally, F-RAM data retention is very robust, supporting a minimum of 10 years, and more than 121 years of data retention at + 85 °C, depending on the individual product.

Figure 1: Technologic Systems is now offering single board computers with an added Ferroelectric Random Access Memory (F-RAM) from Cypress Semiconductor.
Figure 1: Technologic Systems is now offering single board computers with an added Ferroelectric Random Access Memory (F-RAM) from Cypress Semiconductor.

The high-speed nature of the device combined with its non-volatility and data retention makes this memory device useful in many applications. The F-RAM used in Technologic Systems’ products is an AT25 compatible SPI device. The TS-7553-V2 board support package implements the F-RAM as an extra EEPROM-like memory and presents the whole device as a flat file.

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